BSB044N08NN3GXUMA1

Teknik Özellikler

Continuous Drain Current Id

18A

Case Connection

DRAIN

JESD-609 Kodu

e4

Seri

OptiMOS™

Transistor Application

SWITCHING

Yayın Yılı

2011

Kılıf / Paket

3-WDSON

Drainsource On Resistancemax

0.0044Ohm

Montaj

Surface Mount

Reach Svhc

No SVHC

Avalanche Energy Rating Eas

660 mJ

Terminal Pozisyonu

BOTTOM

Contact Plating

Silver

RoHS Durumu

ROHS3 Compliant

Halogen Free

Halogen Free

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

4.4m Ω @ 30A, 10V

Qualification Status

Not Qualified

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

18A Ta 90A Tc

Power Dissipation Max

2.2W Ta 78W Tc

Nem Hassasiyeti (MSL)

3 (168 Hours)

Fet Type

N-Channel

Fabrika Tedarik Süresi

17 Weeks

Vgs Max

±20V

Pin Sayısı

3

Kurşunsuz

Lead Free

Parça Durumu

Not For New Designs

Number Of Elements

1

Max Dual Supply Voltage

80V

Kurşunsuz Kodu

yes

Terminal Formu

NO LEAD

Rise Time

9ns

Vgsth Max Id

3.5V @ 97μA

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

2.8V

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Configuration

SINGLE WITH BUILT-IN DIODE