BSB015N04NX3GXUMA1

Teknik Özellikler

Montaj

Surface Mount

Terminal Pozisyonu

BOTTOM

Avalanche Energy Rating Eas

290 mJ

Contact Plating

Silver

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Continuous Drain Current Id

35A

Seri

OptiMOS™

JESD-609 Kodu

e4

Transistor Application

SWITCHING

Yayın Yılı

2011

Kılıf / Paket

3-WDSON

Drainsource On Resistancemax

0.0015Ohm

Nem Hassasiyeti (MSL)

3 (168 Hours)

Power Dissipation Max

2.8W Ta 89W Tc

Fet Type

N-Channel

Fabrika Tedarik Süresi

26 Weeks

Vgs Max

±20V

Drain Currentmax Abs Id

180A

Pulsed Drain Currentmax Idm

400A

Halogen Free

Halogen Free

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

1.5m Ω @ 30A, 10V

Qualification Status

Not Qualified

Current Continuous Drain Id25

36A Ta 180A Tc

Rise Time

6.4ns

Vgsth Max Id

4V @ 250μA

Jesd30 Code

R-MBCC-N3

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Lead Free

Number Of Elements

1

Parça Durumu

Active

Max Dual Supply Voltage

40V

Kurşunsuz Kodu

yes

Terminal Formu

NO LEAD

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

12000pF @ 20V

Gate Charge Qg Max Vgs

142nC @ 10V

Terminal Sayısı

3