BSB014N04LX3GXUMA1

Teknik Özellikler

Power Dissipation Max

2.8W Ta 89W Tc

Nem Hassasiyeti (MSL)

3 (168 Hours)

Pin Sayısı

2

Vgs Max

±20V

Pulsed Drain Currentmax Idm

400A

Halogen Free

Halogen Free

Qualification Status

Not Qualified

Terminal Pozisyonu

BOTTOM

JESD-609 Kodu

e4

Case Connection

DRAIN

Kılıf / Paket

3-WDSON

Input Capacitance Ciss Max Vds

16900pF @ 20V

ECCN Kodu

EAR99

Turn Off Delay Time

60 ns

Gate Charge Qg Max Vgs

196nC @ 10V

Gate To Source Voltage Vgs

20V

Terminal Sayısı

3

Montaj Tipi

Surface Mount

Threshold Voltage

2V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Rise Time

8.4ns

Jesd30 Code

R-MBCC-N3

Vgsth Max Id

2V @ 250μA

Transistor Element Material

SILICON

Parça Durumu

Active

Power Dissipation

89W

Fabrika Tedarik Süresi

26 Weeks

Fet Type

N-Channel

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

36A Ta 180A Tc

Rds On Max Id Vgs

1.4m Ω @ 30A, 10V

Montaj

Surface Mount

Reach Svhc

No SVHC

RoHS Durumu

ROHS3 Compliant

Seri

OptiMOS™

Continuous Drain Current Id

36A

Yayın Yılı

2011

Transistor Application

SWITCHING

Terminal Kaplaması

Silver/Nickel (Ag/Ni)