BSB013NE2LXIXUMA1

Teknik Özellikler

Pin Sayısı

3

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-40°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Sayısı

3

Gate To Source Voltage Vgs

20V

Drain To Source Voltage Vdss

25V

Montaj Tipi

Surface Mount

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

4400pF @ 12V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate Charge Qg Max Vgs

62nC @ 10V

Kurşunsuz Kodu

yes

Terminal Formu

NO LEAD

Number Of Elements

1

Parça Durumu

Active

Power Dissipation

2.8W

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Rise Time

6.4ns

Vgsth Max Id

2V @ 250μA

Jesd30 Code

R-MBCC-N3

Rds On Max Id Vgs

1.3m Ω @ 30A, 10V

Qualification Status

Not Qualified

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

36A Ta 163A Tc

Ambalaj

Tape & Reel (TR)

Fet Type

N-Channel

Fabrika Tedarik Süresi

26 Weeks

Vgs Max

±20V

Pin Sayısı

7

Pulsed Drain Currentmax Idm

400A

Power Dissipation Max

2.8W Ta 57W Tc

Nem Hassasiyeti (MSL)

3 (168 Hours)

Transistor Application

SWITCHING

Yayın Yılı

2013

Kılıf / Paket

3-WDSON

Continuous Drain Current Id

36A

Case Connection

DRAIN

JESD-609 Kodu

e4