AUIRLS3036

Teknik Özellikler

Fabrika Tedarik Süresi

39 Weeks

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Gate Charge Qg Max Vgs

140nC @ 4.5V

Case Connection

DRAIN

Pulsed Drain Currentmax Idm

1100A

ECCN Kodu

EAR99

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Ds Breakdown Voltagemin

60V

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

60V

Seri

HEXFET®

Terminal Sayısı

2

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Current Continuous Drain Id25

195A Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±16V

Yüzey Montaj

YES

Drain Currentmax Abs Id

195A

Input Capacitance Ciss Max Vds

11210pF @ 50V

Drainsource On Resistancemax

0.0024Ohm

Vgsth Max Id

2.5V @ 250μA

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Avalanche Energy Rating Eas

290 mJ

Power Dissipation Max

380W Tc

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Montaj Tipi

Surface Mount

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2008

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Parça Durumu

Discontinued

Transistor Element Material

SILICON

Rds On Max Id Vgs

2.4m Ω @ 165A, 10V