AUIRFZ44N

Teknik Özellikler

Fet Type

N-Channel

Yükseklik

16.51mm

Turn On Delay Time

7.3 ns

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

47 ns

Uzunluk

10.66mm

Terminal Sayısı

3

Seri

HEXFET®

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

55V

Rise Time

69ns

Threshold Voltage

2V

Fabrika Tedarik Süresi

8 Weeks

ECCN Kodu

EAR99

Fall Time Typ

60 ns

Gate To Source Voltage Vgs

20V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Gate Charge Qg Max Vgs

63nC @ 10V

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj Tipi

Through Hole

Number Of Elements

1

Continuous Drain Current Id

49A

Power Dissipation Max

94W Tc

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Rds On Max Id Vgs

17.5m Ω @ 25A, 10V

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2007

Kılıf / Paket

TO-220-3

Element Configuration

Single

Genişlik

4.82mm

Parça Durumu

Obsolete

Pin Sayısı

3

Input Capacitance Ciss Max Vds

1470pF @ 25V

Current Continuous Drain Id25

49A Tc

Ambalaj

Tube

Montaj

Surface Mount, Through Hole

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)