AUIRFS3306TRL

Teknik Özellikler

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Yükseklik

4.83mm

Fet Type

N-Channel

Seri

HEXFET®

Jesd30 Code

R-PSSO-G2

Power Dissipation

230W

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Genişlik

9.65mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

16 Weeks

Gate Charge Qg Max Vgs

125nC @ 10V

Montaj

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time Typ

77 ns

Continuous Drain Current Id

120A

Operating Mode

ENHANCEMENT MODE

Radyasyon Dayanımı

No

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

60V

Parça Durumu

Active

Number Of Elements

1

Pin Sayısı

3

Transistor Application

SWITCHING

Rise Time

76ns

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Vgs Max

±20V

Uzunluk

10.67mm

Yayın Yılı

2011

Drainsource On Resistancemax

0.0042Ohm

Terminal Formu

GULL WING

Power Dissipation Max

230W Tc

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

40 ns

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

4520pF @ 50V

RoHS Durumu

ROHS3 Compliant

Contact Plating

Tin