AUIRFP064N

Teknik Özellikler

Montaj

Through Hole

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

9 Weeks

Gate Charge Qg Max Vgs

170nC @ 10V

Vgsth Max Id

4V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drive Voltage Max Rds On Min Rds On

10V

Genişlik

5.31mm

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Transistor Element Material

SILICON

Power Dissipation

200W

Input Capacitance Ciss Max Vds

4000pF @ 25V

Turn Off Delay Time

43 ns

Jedec95 Code

TO-247AC

Seri

HEXFET®

Gate To Source Voltage Vgs

20V

Power Dissipation Max

200W Tc

Yayın Yılı

2011

Uzunluk

15.87mm

Vgs Max

±20V

Fet Type

N-Channel

Yükseklik

20.7mm

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Drainsource On Resistancemax

0.008Ohm

Current Continuous Drain Id25

110A Tc

Element Configuration

Single

Rise Time

100ns

Ambalaj

Tube

Pin Sayısı

3

Number Of Elements

1

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

55V

Turn On Delay Time

14 ns

Parça Durumu

Obsolete

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Threshold Voltage

2V

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole