AUIRF6215

Teknik Özellikler

Seri

HEXFET®

Jedec95 Code

TO-220AB

Gate To Source Voltage Vgs

20V

Power Dissipation Max

110W Tc

Vgs Max

±20V

Uzunluk

10.66mm

Yayın Yılı

2006

Drain To Source Voltage Vdss

150V

Drainsource On Resistancemax

0.29Ohm

Fet Type

P-Channel

Yükseklik

16.51mm

Additional Feature

AVALANCHE RATED

Turn Off Delay Time

53 ns

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

860pF @ 25V

Power Dissipation

110W

Montaj

Through Hole

Reach Svhc

No SVHC

Genişlik

4.82mm

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

66nC @ 10V

Vgsth Max Id

4V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

16 Weeks

Pulsed Drain Currentmax Idm

44A

Kılıf / Paket

TO-220-3

Fall Time Typ

37 ns

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~175°C TJ

Rds On Max Id Vgs

290m Ω @ 6.6A, 10V

Radyasyon Dayanımı

No

Threshold Voltage

-2V

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Montaj Tipi

Through Hole

Continuous Drain Current Id

13A

Number Of Elements

1

Pin Sayısı

3