AUIRF540ZSTRL

Teknik Özellikler

Turn Off Delay Time

43 ns

Jesd30 Code

R-PSSO-G2

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Kurşunsuz

Lead Free

Seri

HEXFET®

Gate To Source Voltage Vgs

20V

Power Dissipation Max

92W Tc

Yayın Yılı

2003

Vgs Max

±20V

Fet Type

N-Channel

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Drainsource On Resistancemax

0.0265Ohm

Terminal Formu

GULL WING

Montaj

Surface Mount

Vgsth Max Id

4V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

63nC @ 10V

Fabrika Tedarik Süresi

16 Weeks

Drive Voltage Max Rds On Min Rds On

10V

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

1770pF @ 25V

Power Dissipation

92W

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Continuous Drain Current Id

36A

Pulsed Drain Currentmax Idm

140A

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time Typ

39 ns

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Rds On Max Id Vgs

26.5m Ω @ 22A, 10V

Current Continuous Drain Id25

36A Tc

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Element Configuration

Single

Rise Time

51ns