AUIRF4905

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

3400pF @ 25V

Reach Svhc

No SVHC

Contact Plating

Tin

Vgsth Max Id

4V @ 250μA

Power Dissipation Max

200W Tc

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Uzunluk

10.66mm

Yayın Yılı

2006

Drainsource On Resistancemax

0.02Ohm

Turn Off Delay Time

61 ns

Turn On Delay Time

18 ns

Current Continuous Drain Id25

74A Tc

Ambalaj

Tube

Element Configuration

Single

Terminal Sayısı

3

Pulsed Drain Currentmax Idm

260A

Rds On Max Id Vgs

20m Ω @ 38A, 10V

Threshold Voltage

-2V

Montaj Tipi

Through Hole

Case Connection

DRAIN

Power Dissipation

200W

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Genişlik

4.82mm

Fabrika Tedarik Süresi

16 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

180nC @ 10V

Seri

HEXFET®

Jedec95 Code

TO-220AB

Drain To Source Voltage Vdss

55V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Yükseklik

16.51mm

Fet Type

P-Channel

Number Of Elements

1

Pin Sayısı

3

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

-55V