
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Turn Off Delay Time
- 41 ns
- Power Dissipation Max
- 160W Tc
- Gate To Source Voltage Vgs
- 20V
- Drainsource On Resistancemax
- 0.018Ohm
- Terminal Formu
- GULL WING
- Uzunluk
- 10.668mm
- Yayın Yılı
- 2010
- Vgs Max
- ±20V
- Vgsth Max Id
- 4V @ 250μA
- RoHS Durumu
- ROHS3 Compliant
- Input Capacitance Ciss Max Vds
- 2900pF @ 25V
- Transistor Element Material
- SILICON
- Montaj Tipi
- Surface Mount
- Terminal Sayısı
- 2
- Pulsed Drain Currentmax Idm
- 240A
- Rds On Max Id Vgs
- 18m Ω @ 35A, 10V
- Current Continuous Drain Id25
- 59A Tc
- Element Configuration
- Single
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e3
- Turn On Delay Time
- 17 ns
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Jesd30 Code
- R-XSSO-G2
- Seri
- HEXFET®
- Fet Type
- N-Channel
- Yükseklik
- 4.826mm
- Montaj
- Surface Mount
- Fabrika Tedarik Süresi
- 16 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 120nC @ 10V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Genişlik
- 9.65mm
- Power Dissipation
- 160W
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- Continuous Drain Current Id
- 59A
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time Typ
- 56 ns
- Avalanche Energy Rating Eas
- 200 mJ
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