AUIRF1405ZSTRL

Teknik Özellikler

Power Dissipation

230W

Case Connection

DRAIN

Genişlik

9.65mm

Drive Voltage Max Rds On Min Rds On

10V

Fabrika Tedarik Süresi

16 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

180nC @ 10V

Montaj

Surface Mount

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Yükseklik

4.826mm

Fet Type

N-Channel

Seri

HEXFET®

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Jesd30 Code

R-PSSO-G2

Parça Durumu

Active

Drain To Source Breakdown Voltage

55V

Transistor Application

SWITCHING

Number Of Elements

1

Pin Sayısı

3

Rise Time

110ns

Tepe Reflow Süresi (maks. sn)

30

Tepe Reflow Sıcaklığı (°C)

260

Avalanche Energy Rating Eas

270 mJ

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

82 ns

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current Id

150A

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

4780pF @ 25V

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

4V @ 250μA

Drainsource On Resistancemax

0.0049Ohm

Terminal Formu

GULL WING

Vgs Max

±20V

Uzunluk

10.668mm

Yayın Yılı

2013

Power Dissipation Max

230W Tc