AUIRF1018ES

Teknik Özellikler

Drainsource On Resistancemax

0.0084Ohm

Terminal Formu

GULL WING

Vgs Max

±20V

Uzunluk

10.67mm

Yayın Yılı

2011

Gate To Source Voltage Vgs

20V

Power Dissipation Max

110W Tc

Turn Off Delay Time

55 ns

Input Capacitance Ciss Max Vds

2290pF @ 50V

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

4V @ 100μA

Contact Plating

Lead, Tin

Reach Svhc

No SVHC

Rds On Max Id Vgs

8.4m Ω @ 47A, 10V

Terminal Sayısı

2

Montaj Tipi

Surface Mount

Turn On Delay Time

13 ns

JESD-609 Kodu

e3

Ambalaj

Tube

Element Configuration

Single

Current Continuous Drain Id25

79A Tc

Fet Type

N-Channel

Yükseklik

4.83mm

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Seri

HEXFET®

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Jesd30 Code

R-PSSO-G2

Power Dissipation

110W

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Genişlik

9.65mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

69nC @ 10V

Montaj

Surface Mount

Avalanche Energy Rating Eas

88 mJ

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

46 ns

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current Id

79A