SPI20N60CFD

Teknik Özellikler

Power Dissipation Max

208W (Tc)

Paket

Bulk

Drain To Source Breakdown Voltage

600 V

Technology

MOSFET (Metal Oxide)

Rise Time

15 ns

Drain To Source Voltage Vdss

600 V

Continuous Drain Current Id

20.7 A

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Tedarikçi Cihaz Paketi

PG-TO262-3-1

Min. Çalışma Sıcaklığı

-55 °C

Dual Supply Voltage

650 V

Current Continuous Drain Id25

20.7A (Tc)

Nominal Vgs

4 V

Ürün Durumu

Active

Vgsth Max Id

5V @ 1mA

Rds On Max

220 mΩ

Max Power Dissipation

208 W

Drain To Source Resistance

220 mΩ

Input Capacitance Ciss Max Vds

2400 pF @ 25 V

Gate Charge Qg Max Vgs

124 nC @ 10 V

Gate To Source Voltage Vgs

20 V

Turn Off Delay Time

59 ns

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

220mOhm @ 13.1A, 10V

Vgs Max

±20V

Reach Svhc

No SVHC

Power Dissipation

208 W

Element Configuration

Single

Kılıf / Paket

TO-262-3 Long Leads, I²Pak, TO-262AA

Terminal

Through Hole

Seri

CoolMOS™

Montaj Tipi

Through Hole

RoHS

Compliant

Maks. Çalışma Sıcaklığı

150 °C

Pin Sayısı

3

Fet Type

N-Channel

Input Capacitance

2.4 nF