Adet bazlı fiyat
- 1+ adet$2.02
- 10+ adet$1.90
- 100+ adet$1.80
- 500+ adet$1.69
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Rds On Max Id Vgs
- 330mOhm @ 9.4A, 10V
- Vgs Max
- ±20V
- Reach Svhc
- No SVHC
- Kılıf / Paket
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Terminal
- Through Hole
- Power Dissipation
- 156 W
- Channel Type
- N
- Element Configuration
- Single
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn Off Delay Time
- 47 ns
- Turn On Delay Time
- 43 ns
- Number Of Elements
- 1
- Fet Type
- N-Channel
- Input Capacitance
- 1.82 nF
- RoHS
- Compliant
- Montaj Tipi
- Through Hole
- Seri
- CoolMOS™
- Threshold Voltage
- 4 V
- Maks. Çalışma Sıcaklığı
- 150 °C
- Pin Sayısı
- 3
- Min. Çalışma Sıcaklığı
- -55 °C
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Tedarikçi Cihaz Paketi
- PG-TO262-3-1
- Dual Supply Voltage
- 650 V
- Paket
- Bulk
- Power Dissipation Max
- 156W (Tc)
- Drain To Source Breakdown Voltage
- 600 V
- Rise Time
- 24 ns
- Continuous Drain Current Id
- 13.4 A
- Drain To Source Voltage Vdss
- 650 V
- Technology
- MOSFET (Metal Oxide)
- Drain To Source Resistance
- 330 mΩ
- Rds On Max
- 330 mΩ
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 156 W
- Gate To Source Voltage Vgs
- 20 V
- Gate Charge Qg Max Vgs
- 84 nC @ 10 V
- Input Capacitance Ciss Max Vds
- 1820 pF @ 25 V
- Current Continuous Drain Id25
- 13.4A (Tc)
- Kurşunsuz
- Lead Free
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