SPI15N60CFD

Teknik Özellikler

Rds On Max Id Vgs

330mOhm @ 9.4A, 10V

Vgs Max

±20V

Reach Svhc

No SVHC

Kılıf / Paket

TO-262-3 Long Leads, I²Pak, TO-262AA

Terminal

Through Hole

Power Dissipation

156 W

Channel Type

N

Element Configuration

Single

Drive Voltage Max Rds On Min Rds On

10V

Turn Off Delay Time

47 ns

Turn On Delay Time

43 ns

Number Of Elements

1

Fet Type

N-Channel

Input Capacitance

1.82 nF

RoHS

Compliant

Montaj Tipi

Through Hole

Seri

CoolMOS™

Threshold Voltage

4 V

Maks. Çalışma Sıcaklığı

150 °C

Pin Sayısı

3

Min. Çalışma Sıcaklığı

-55 °C

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Tedarikçi Cihaz Paketi

PG-TO262-3-1

Dual Supply Voltage

650 V

Paket

Bulk

Power Dissipation Max

156W (Tc)

Drain To Source Breakdown Voltage

600 V

Rise Time

24 ns

Continuous Drain Current Id

13.4 A

Drain To Source Voltage Vdss

650 V

Technology

MOSFET (Metal Oxide)

Drain To Source Resistance

330 mΩ

Rds On Max

330 mΩ

Radyasyon Dayanımı

No

Max Power Dissipation

156 W

Gate To Source Voltage Vgs

20 V

Gate Charge Qg Max Vgs

84 nC @ 10 V

Input Capacitance Ciss Max Vds

1820 pF @ 25 V

Current Continuous Drain Id25

13.4A (Tc)

Kurşunsuz

Lead Free