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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Drain Currentmax Id
- 45 A
- Drainsource On Resistancemax
- 0.0055 Ω
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- ECCN Kodu
- EAR99
- Jedec95 Code
- TO-254AA
- Operating Temperaturemax
- 150 °C
- Üretici Parça No
- IRF7MS2907
- Ihs Manufacturer
- INFINEON TECHNOLOGIES AG
- Power Dissipationmax Abs
- 208 W
- Reflow Temperaturemax S
- NOT SPECIFIED
- Yüzey Montaj
- NO
- Transistor Element Material
- SILICON
- Avalanche Energy Rating Eas
- 760 mJ
- Risk Rank
- 5.18
- Number Of Terminals
- 3
- Package Description
- HERMETIC SEALED PACKAGE-3
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Part Life Cycle Code
- Active
- Terminal Formu
- PIN/PEG
- Jesd30 Code
- S-MSFM-P3
- Rohs Code
- No
- REACH Uyumluluk Kodu
- unknown
- Terminal Pozisyonu
- SINGLE
- JESD-609 Kodu
- e0
- Number Of Elements
- 1
- Package Style
- FLANGE MOUNT
- Package Body Material
- METAL
- Qualification Status
- Not Qualified
- Ds Breakdown Voltagemin
- 75 V
- Transistor Application
- SWITCHING
- Polaritychannel Type
- N-CHANNEL
- Package Shape
- SQUARE
- Pulsed Drain Currentmax Idm
- 180 A
- Operating Mode
- ENHANCEMENT MODE
- Drain Currentmax Abs Id
- 45 A
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