IRF6216TRPBF-1

Teknik Özellikler

Number Of Elements

1

Part Life Cycle Code

End Of Life

Rohs Code

Yes

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

REACH Uyumluluk Kodu

compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Risk Rank

5.29

Transistor Element Material

SILICON

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Input Capacitance Ciss Max Vds

1280 pF @ 25 V

Jesd30 Code

R-PDSO-G8

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

150 V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Rds On Max Id Vgs

240mOhm @ 1.3A, 10V

Technology

MOSFET (Metal Oxide)

Vgs Max

±20V

Fet Type

P-Channel

Moisture Sensitivity Levels

1

Package Shape

RECTANGULAR

Current Continuous Drain Id25

2.2A (Ta)

Montaj Tipi

Surface Mount

Vgsth Max Id

5V @ 250µA

Terminal Pozisyonu

DUAL

Paket

Tape & Reel (TR)

Seri

HEXFET®

Power Dissipation Max

2.5W (Ta)

Ürün Durumu

Obsolete

Jedec95 Code

MS-012AA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Body Material

PLASTIC/EPOXY

Drain Currentmax Id

2.2 A

Drainsource On Resistancemax

0.24 Ω

Drain To Source Voltage Vdss

150 V

Operating Mode

ENHANCEMENT MODE

Reflow Temperaturemax S

NOT SPECIFIED

Polaritychannel Type

P-CHANNEL

Yüzey Montaj

YES

Drive Voltage Max Rds On Min Rds On

10V