Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Halogen Free
- Halogen Free
- Ürün Durumu
- Active
- Seri
- Automotive, AEC-Q101, OptiMOS™
- Min. Çalışma Sıcaklığı
- -55 °C
- Channel Type
- Dual N
- Moisture Sensitivity Levels
- 1
- Vgsth Max Id
- 2V @ 14µA
- Fabrika Tedarik Süresi
- 10 Weeks
- Operating Mode
- ENHANCEMENT MODE
- Rds On Max Id Vgs
- 65mOhm @ 15A, 10V
- Rohs Code
- Yes
- Gate Charge Qg Max Vgs
- 12nC @ 10V
- Msl
- MSL 1 - Unlimited
- Drainsource On Resistancemax
- 0.065 Ω
- Terminal Pozisyonu
- DUAL
- Part Life Cycle Code
- Active
- Kurşunsuz
- Contains Lead
- Temel Ürün No
- IPG20N
- Fet Feature
- Logic Level Gate
- Reference Standard
- AEC-Q101
- Jesd30 Code
- R-PDSO-F
- Üretici Parça No
- IPG20N06S2L65ATMA1
- Pin Sayısı
- 8
- Gate To Source Voltage Vgs
- 20 V
- Yüzey Montaj
- YES
- Çalışma Sıcaklığı
- -55°C ~ 175°C (TJ)
- Montaj
- Surface Mount
- ECCN Kodu
- EAR99
- Risk Rank
- 1.59
- Input Capacitance
- 410 pF
- Current Continuous Drain Id25
- 20A
- Kılıf / Paket
- 8-PowerVDFN
- Max Power Dissipation
- 43 W
- Package Style
- SMALL OUTLINE
- Max Dual Supply Voltage
- 55 V
- Drain To Source Resistance
- 53 mΩ
- Polaritychannel Type
- N-CHANNEL
- Fet Type
- 2 N-Channel (Dual)
- JESD-609 Kodu
- e3
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