IPB052N04NG

Teknik Özellikler

Pin Sayısı

4

Package Shape

RECTANGULAR

Polaritychannel Type

N-CHANNEL

Pulsed Drain Currentmax Idm

400 A

Current Continuous Drain Id25

70A (Tc)

Rds On Max Id Vgs

5.2mOhm @ 70A, 10V

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

40 V

Qualification Status

Not Qualified

Paket

Bulk

Package Body Material

PLASTIC/EPOXY

Vgsth Max Id

4V @ 33µA

Seri

OptiMOS™ 3

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSSO-G2

REACH Uyumluluk Kodu

compliant

Rohs Code

Yes

Gate Charge Qg Max Vgs

42 nC @ 10 V

Channel Type

N

Number Of Terminals

2

Kılıf / Paket

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Vgs Max

±20V

Transistor Element Material

SILICON

Üretici Parça No

IPB052N04NG

ECCN Kodu

EAR99

Jedec95 Code

TO-263AB

Drainsource On Resistancemax

0.0052 Ω

Tepe Reflow Sıcaklığı (°C)

260

Configuration

SINGLE WITH BUILT-IN DIODE

Drain Currentmax Abs Id

70 A

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

70

Tedarikçi Cihaz Paketi

PG-TO-263-3-2

Drain To Source Voltage Vdss

40 V

Package Style

SMALL OUTLINE

Power Dissipation Max

79W (Tc)

JESD-609 Kodu

e3