Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Terminal Pozisyonu
- DUAL
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Reflow Temperaturemax S
- NOT SPECIFIED
- Package Shape
- SQUARE
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Ds Breakdown Voltagemin
- 60 V
- Drainsource On Resistancemax
- 0.011 Ω
- Case Connection
- DRAIN
- Fabrika Tedarik Süresi
- 26 Weeks
- Package Body Material
- PLASTIC/EPOXY
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- Number Of Terminals
- 5
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Terminal Formu
- NO LEAD
- Drain Currentmax Id
- 11 A
- Number Of Elements
- 1
- ECCN Kodu
- EAR99
- Risk Rank
- 5.68
- Üretici Parça No
- BSZ110N06NS3GXT
- Rohs Code
- Yes
- Part Life Cycle Code
- Active
- Package Description
- SMALL OUTLINE, S-PDSO-N5
- Transistor Application
- SWITCHING
- Yüzey Montaj
- YES
- Package Style
- SMALL OUTLINE
- Pulsed Drain Currentmax Idm
- 80 A
- Channel Type
- N
- Ihs Manufacturer
- INFINEON TECHNOLOGIES AG
- Continuous Drain Current Id
- 20
- Operating Temperaturemax
- 150 °C
- REACH Uyumluluk Kodu
- compliant
- Polaritychannel Type
- N-CHANNEL
- Jesd30 Code
- S-PDSO-N5
- Avalanche Energy Rating Eas
- 55 mJ
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