BSZ110N06NS3GXT

Teknik Özellikler

Terminal Pozisyonu

DUAL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Reflow Temperaturemax S

NOT SPECIFIED

Package Shape

SQUARE

Configuration

SINGLE WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

60 V

Drainsource On Resistancemax

0.011 Ω

Case Connection

DRAIN

Fabrika Tedarik Süresi

26 Weeks

Package Body Material

PLASTIC/EPOXY

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Number Of Terminals

5

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

NO LEAD

Drain Currentmax Id

11 A

Number Of Elements

1

ECCN Kodu

EAR99

Risk Rank

5.68

Üretici Parça No

BSZ110N06NS3GXT

Rohs Code

Yes

Part Life Cycle Code

Active

Package Description

SMALL OUTLINE, S-PDSO-N5

Transistor Application

SWITCHING

Yüzey Montaj

YES

Package Style

SMALL OUTLINE

Pulsed Drain Currentmax Idm

80 A

Channel Type

N

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Continuous Drain Current Id

20

Operating Temperaturemax

150 °C

REACH Uyumluluk Kodu

compliant

Polaritychannel Type

N-CHANNEL

Jesd30 Code

S-PDSO-N5

Avalanche Energy Rating Eas

55 mJ