ZXMN2A02N8TA

Teknik Özellikler

Power Dissipation Max

1.56W Ta

Gate Charge Qg Max Vgs

18.9nC @ 4.5V

Number Of Elements

1

Pin Sayısı

8

Operating Mode

ENHANCEMENT MODE

Vgs Max

±12V

Terminal Sayısı

8

Input Capacitance Ciss Max Vds

1900pF @ 10V

Kurşunsuz

Lead Free

Voltage Rated Dc

20V

Vgsth Max Id

700mV @ 250μA

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Channels

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

8

Terminal Formu

GULL WING

Montaj

Surface Mount

Kurşunsuz Kodu

yes

Direnç

20mOhm

Turn Off Delay Time

33.3 ns

Radyasyon Dayanımı

No

Parça Durumu

Obsolete

Turn On Delay Time

7.9 ns

Rise Time

10ns

Current Continuous Drain Id25

8.3A Ta

Weight

73.992255mg

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Fall Time Typ

10 ns

Transistor Element Material

SILICON

Terminal Kaplaması

Matte Tin (Sn)

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

12V

Pulsed Drain Currentmax Idm

50A

Fet Type

N-Channel

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Akım Değeri

10.2A

Drain To Source Breakdown Voltage

20V

JESD-609 Kodu

e3