DMTH6016LPSQ-13

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

18 Weeks

Pin Sayısı

8

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

60V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

8-PowerTDFN

Terminal Formu

FLAT

Seri

Automotive, AEC-Q101

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

864pF @ 30V

Terminal Sayısı

5

Montaj

Surface Mount

Avalanche Energy Rating Eas

11.7 mJ

Drain To Source Voltage Vdss

60V

REACH Uyumluluk Kodu

not_compliant

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.016Ohm

Jesd30 Code

R-PDSO-F5

Vgs Max

±20V

Montaj Tipi

Surface Mount

Yayın Yılı

2016

Power Dissipation Max

2.6W Ta 37.5W Tc

Gate Charge Qg Max Vgs

17nC @ 10V

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

N-Channel

Rds On Max Id Vgs

16m Ω @ 20A, 10V

Current Continuous Drain Id25

9.8A Ta 37A Tc

Additional Feature

HIGH RELIABILITY

Pulsed Drain Currentmax Idm

75A

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Continuous Drain Current Id

37A

Terminal Kaplaması

Matte Tin (Sn)

Transistor Application

SWITCHING

Parça Durumu

Active

JESD-609 Kodu

e3