DMTH6010SK3-13

Teknik Özellikler

Vgs Max

±20V

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

3.1W Ta

Montaj Tipi

Surface Mount

Yayın Yılı

2015

Gate Charge Qg Max Vgs

36.3nC @ 10V

Number Of Elements

1

Additional Feature

HIGH RELIABILITY

Current Continuous Drain Id25

16.3A Ta 70A Tc

Rds On Max Id Vgs

8m Ω @ 20A, 10V

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~175°C TJ

Pulsed Drain Currentmax Idm

80A

Continuous Drain Current Id

70A

Terminal Kaplaması

Matte Tin (Sn)

Drain Currentmax Abs Id

16.3A

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

4V @ 250μA

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

23 Weeks

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Ambalaj

Tape & Reel (TR)

Drive Voltage Max Rds On Min Rds On

10V

Reference Standard

AEC-Q101

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

60V

Terminal Formu

GULL WING

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

1940pF @ 30V

Terminal Sayısı

2

Drain To Source Voltage Vdss

60V

Montaj

Surface Mount