DMTH6009LK3-13

Teknik Özellikler

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

1925pF @ 30V

Terminal Sayısı

2

Drain To Source Voltage Vdss

60V

Montaj

Surface Mount

Avalanche Energy Rating Eas

20.6 mJ

Drainsource On Resistancemax

0.01Ohm

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

23 Weeks

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Ambalaj

Tape & Reel (TR)

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Reference Standard

AEC-Q101

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

60V

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

90A

Çalışma Sıcaklığı

-55°C~175°C TJ

Continuous Drain Current Id

59A

Terminal Kaplaması

Matte Tin (Sn)

ECCN Kodu

EAR99

Drain Currentmax Abs Id

14.2A

JESD-609 Kodu

e3

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

2V @ 250μA

Vgs Max

±16V

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

3.2W Ta 60W Tc

Yayın Yılı

2015

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

33.5nC @ 10V

Number Of Elements

1

Additional Feature

HIGH RELIABILITY