DMT68M8LSS-13

Teknik Özellikler

Jesd30 Code

R-PDSO-G8

Vgs Max

±20V

Montaj Tipi

Surface Mount

Power Dissipation Max

1.9W Ta

Gate Charge Qg Max Vgs

31.8nC @ 10V

Number Of Elements

1

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Current Continuous Drain Id25

28.9A Tc

Rds On Max Id Vgs

8.5m Ω @ 13.5A, 10V

Pulsed Drain Currentmax Idm

100A

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Drain Currentmax Abs Id

12.1A

Terminal Kaplaması

Matte Tin (Sn)

Parça Durumu

Active

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

30

JESD-609 Kodu

e3

Vgsth Max Id

3V @ 250μA

Tepe Reflow Sıcaklığı (°C)

260

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

20 Weeks

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

60V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Yüzey Montaj

YES

Terminal Formu

GULL WING

Input Capacitance Ciss Max Vds

2107pF @ 30V

Terminal Sayısı

8

Avalanche Energy Rating Eas

54.2 mJ

Drain To Source Voltage Vdss

60V

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.0085Ohm