DMT5015LFDF-7

Teknik Özellikler

Turn On Delay Time

2.8 ns

Terminal Pozisyonu

DUAL

Terminal Sayısı

6

Jesd30 Code

S-PDSO-N6

Element Configuration

Single

Yayın Yılı

2014

Power Dissipation Max

820mW Ta

Rise Time

5.1ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

9.1A

Vgsth Max Id

2V @ 250μA

Direnç

15mOhm

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Rds On Max Id Vgs

15m Ω @ 8A, 10V

Fabrika Tedarik Süresi

22 Weeks

Gate Charge Qg Max Vgs

14nC @ 10V

Parça Durumu

Active

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Gate To Source Voltage Vgs

16V

Drain To Source Breakdown Voltage

50V

Input Capacitance Ciss Max Vds

902.7pF @ 25V

Terminal Formu

NO LEAD

Fall Time Typ

2.7 ns

Number Of Channels

1

Vgs Max

±16V

JESD-609 Kodu

e4

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

6-UDFN Exposed Pad

Transistor Element Material

SILICON

Turn Off Delay Time

10.6 ns

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Operating Mode

ENHANCEMENT MODE

Montaj

Surface Mount

Case Connection

DRAIN

Fet Type

N-Channel