DMT10H015LK3-13

Teknik Özellikler

Terminal Sayısı

2

Terminal Pozisyonu

SINGLE

Yayın Yılı

2017

Additional Feature

HIGH RELIABILITY

Jesd30 Code

R-PSSO-G2

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation Max

2.9W Ta

Ambalaj

Tape & Reel (TR)

Seri

Automotive, AEC-Q101

Vgsth Max Id

3.5V @ 250μA

REACH Uyumluluk Kodu

not_compliant

Transistor Application

SWITCHING

Rds On Max Id Vgs

15m Ω @ 20A, 10V

Gate Charge Qg Max Vgs

33.3nC @ 10V

Parça Durumu

Active

Fabrika Tedarik Süresi

23 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

100V

Drainsource On Resistancemax

0.018Ohm

Avalanche Energy Rating Eas

85 mJ

Input Capacitance Ciss Max Vds

1871pF @ 50V

Vgs Max

±20V

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Drive Voltage Max Rds On Min Rds On

6V 10V

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

50A

Terminal Kaplaması

Matte Tin (Sn)

Fet Type

N-Channel

Drain Currentmax Abs Id

30A

ECCN Kodu

EAR99