DMT10H010LCT

Teknik Özellikler

Drain To Source Voltage Vdss

100V

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Fabrika Tedarik Süresi

19 Weeks

Gate Charge Qg Max Vgs

71nC @ 10V

Parça Durumu

Active

Transistor Application

SWITCHING

Rds On Max Id Vgs

9.5m Ω @ 13A, 10V

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

3V @ 250μA

Ambalaj

Tube

Power Dissipation Max

2W Ta 139W Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Continuous Drain Current Id

98A

Reference Standard

AEC-Q101

Jesd30 Code

R-PSFM-T3

Additional Feature

HIGH RELIABILITY

Terminal Pozisyonu

SINGLE

Terminal Sayısı

3

Current Continuous Drain Id25

98A Tc

Ds Breakdown Voltagemin

100V

Drain Currentmax Abs Id

62A

Fet Type

N-Channel

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn)

Pulsed Drain Currentmax Idm

92A

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

4.5V 10V

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

TO-220-3

Transistor Element Material

SILICON

Vgs Max

±20V

Jedec95 Code

TO-220AB

Input Capacitance Ciss Max Vds

3000pF @ 50V