DMP6110SFDF-7

Teknik Özellikler

Vgsth Max Id

3V @ 250μA

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Jesd30 Code

S-PDSO-N6

Terminal Pozisyonu

DUAL

Power Dissipation Max

1.97W Ta

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Drainsource On Resistancemax

0.11Ohm

Yüzey Montaj

YES

Current Continuous Drain Id25

4.2A Ta

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

18 Weeks

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

17.2nC @ 10V

Operating Mode

ENHANCEMENT MODE

Terminal Formu

NO LEAD

Transistor Application

SWITCHING

Terminal Sayısı

6

Yayın Yılı

2000

Number Of Elements

1

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

P-Channel

Tepe Reflow Süresi (maks. sn)

30

Vgs Max

±20V

Case Connection

DRAIN

Seri

Automotive, AEC-Q101

Input Capacitance Ciss Max Vds

969pF @ 30V

JESD-609 Kodu

e4

Rds On Max Id Vgs

110m Ω @ 4.5A, 10V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

6-UDFN Exposed Pad

Drain To Source Voltage Vdss

60V

Ds Breakdown Voltagemin

60V

Drain Currentmax Abs Id

3.5A

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260