DMP6023LFGQ-13

Teknik Özellikler

Terminal Kaplaması

Matte Tin (Sn)

Çalışma Sıcaklığı

-55°C~155°C TJ

Drainsource On Resistancemax

0.025Ohm

Current Continuous Drain Id25

7.7A Ta

RoHS Durumu

ROHS3 Compliant

Vgsth Max Id

3V @ 250μA

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Jesd30 Code

S-PDSO-N5

Terminal Pozisyonu

DUAL

Power Dissipation Max

1W Ta

Terminal Formu

NO LEAD

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Terminal Sayısı

5

Yayın Yılı

2015

Number Of Elements

1

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

23 Weeks

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

53.1nC @ 10V

Input Capacitance Ciss Max Vds

2569pF @ 30V

Additional Feature

HIGH RELIABILITY

JESD-609 Kodu

e3

Rds On Max Id Vgs

25m Ω @ 5A, 10V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

P-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgs Max

±20V

Case Connection

DRAIN

Seri

Automotive, AEC-Q101

Ds Breakdown Voltagemin

60V

ECCN Kodu

EAR99

Continuous Drain Current Id

7.7A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

8-PowerVDFN

Montaj

Surface Mount

Pin Sayısı

8