DMP2023UFDF-7

Teknik Özellikler

Yayın Yılı

2015

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

1837pF @ 15V

Rds On Max Id Vgs

27m Ω @ 7A, 4.5V

Terminal Sayısı

6

Terminal Pozisyonu

DUAL

Current Continuous Drain Id25

7.6A Ta

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

730mW Ta

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Case Connection

DRAIN

Fabrika Tedarik Süresi

16 Weeks

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

30

Drain To Source Voltage Vdss

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

NO LEAD

JESD-609 Kodu

e4

Vgsth Max Id

1V @ 250μA

Ds Breakdown Voltagemin

20V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

27nC @ 4.5V

Tepe Reflow Sıcaklığı (°C)

260

Kılıf / Paket

6-UDFN Exposed Pad

Drainsource On Resistancemax

0.027Ohm

Parça Durumu

Active

Vgs Max

±8V

Continuous Drain Current Id

7.6A

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Fet Type

P-Channel

Jesd30 Code

S-PDSO-N6

RoHS Durumu

ROHS3 Compliant