DMP2002UPS-13

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~150°C TJ

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Drain To Source Voltage Vdss

20V

Case Connection

DRAIN

Fabrika Tedarik Süresi

17 Weeks

Pin Sayısı

8

Vgsth Max Id

1.4V @ 250μA

Ds Breakdown Voltagemin

20V

JESD-609 Kodu

e3

Terminal Formu

FLAT

Drainsource On Resistancemax

0.0019Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

8-PowerTDFN

Vgs Max

±12V

Parça Durumu

Active

REACH Uyumluluk Kodu

not_compliant

Gate Charge Qg Max Vgs

585nC @ 10V

Pulsed Drain Currentmax Idm

100A

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-PDSO-F5

RoHS Durumu

ROHS3 Compliant

Fet Type

P-Channel

Continuous Drain Current Id

60A

Drive Voltage Max Rds On Min Rds On

2.5V 10V

Reference Standard

AEC-Q101

Additional Feature

HIGH RELIABILITY

Current Continuous Drain Id25

60A Tc

Input Capacitance Ciss Max Vds

12826pF @ 10V

Rds On Max Id Vgs

1.9m Ω @ 25A, 10V

Terminal Sayısı

5

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2015

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Power Dissipation Max

2.3W Ta