DMP1200UFR4-7

Teknik Özellikler

Gate Charge Qg Max Vgs

5.8nC @ 4.5V

Configuration

SINGLE WITH BUILT-IN DIODE

Vgs Max

±8V

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

3-XFDFN

Drainsource On Resistancemax

0.1Ohm

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Continuous Drain Current Id

2A

RoHS Durumu

ROHS3 Compliant

Fet Type

P-Channel

Drain To Source Voltage Vdss

12V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Fabrika Tedarik Süresi

6 Weeks

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

NO LEAD

JESD-609 Kodu

e4

Pin Sayısı

3

Ds Breakdown Voltagemin

12V

Vgsth Max Id

1V @ 250μA

Montaj

Surface Mount

Drain Currentmax Abs Id

2A

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2014

Current Continuous Drain Id25

2A Ta

Input Capacitance Ciss Max Vds

514pF @ 5V

Rds On Max Id Vgs

100m Ω @ 2A, 4.5V

Terminal Pozisyonu

DUAL

Terminal Sayısı

3

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

480mW Ta

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount