DMP1080UCB4-7

Teknik Özellikler

Pin Sayısı

4

Vgsth Max Id

1V @ 250μA

JESD-609 Kodu

e1

Terminal Formu

BALL

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Voltage Vdss

12V

Tepe Reflow Süresi (maks. sn)

40

Number Of Channels

1

Drain To Source Breakdown Voltage

-12V

Number Of Elements

1

Fabrika Tedarik Süresi

15 Weeks

RoHS Durumu

ROHS3 Compliant

Fet Type

P-Channel

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Feedback Capmax Crss

90 pF

Continuous Drain Current Id

3.3A

Parça Durumu

Active

Tepe Reflow Sıcaklığı (°C)

260

Kılıf / Paket

4-UFBGA, WLBGA

Gate Charge Qg Max Vgs

5nC @ 4.5V

Configuration

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Gate To Source Voltage Vgs

-6V

Montaj Tipi

Surface Mount

Kurşunsuz Kodu

yes

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation Max

820mW Ta

Ambalaj

Cut Tape (CT)

Current Continuous Drain Id25

3.3A Ta

Additional Feature

HIGH RELIABILITY

Rise Time

20.6ns

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

350pF @ 6V

Rds On Max Id Vgs

80m Ω @ 500mA, 4.5V

Terminal Sayısı

4

Terminal Pozisyonu

BOTTOM

Turn On Delay Time

16.7 ns

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99