Adet bazlı fiyat
- 1+ adet$0.17
- 10+ adet$0.16
- 100+ adet$0.15
- 500+ adet$0.14
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Drive Voltage Max Rds On Min Rds On
- 1.8V 4.5V
- Jesd30 Code
- S-PDSO-N6
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- P-Channel
- Gate Charge Qg Max Vgs
- 44nC @ 8V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Vgs Max
- ±8V
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Kılıf / Paket
- 6-UDFN Exposed Pad
- Drainsource On Resistancemax
- 0.014Ohm
- JESD-609 Kodu
- e4
- Terminal Formu
- NO LEAD
- Ds Breakdown Voltagemin
- 12V
- Vgsth Max Id
- 1V @ 250μA
- Drain To Source Voltage Vdss
- 12V
- Number Of Elements
- 1
- Tepe Reflow Süresi (maks. sn)
- 30
- Fabrika Tedarik Süresi
- 17 Weeks
- Case Connection
- DRAIN
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain Currentmax Abs Id
- 11A
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tape & Reel (TR)
- Power Dissipation Max
- 2W Ta
- Montaj Tipi
- Surface Mount
- Yüzey Montaj
- YES
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Current Continuous Drain Id25
- 15A Ta
- Input Capacitance Ciss Max Vds
- 1860pF @ 10V
- Rds On Max Id Vgs
- 11m Ω @ 5A, 4.5V
- Terminal Sayısı
- 6
- Terminal Pozisyonu
- DUAL
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