DMN67D8L-7

Teknik Özellikler

Fabrika Tedarik Süresi

14 Weeks

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

60V

Çalışma Sıcaklığı

-55°C~150°C TJ

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Vgsth Max Id

2.5V @ 250μA

Ds Breakdown Voltagemin

60V

Pin Sayısı

3

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

0.82nC @ 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Drainsource On Resistancemax

5Ohm

Vgs Max

±30V

Parça Durumu

Active

Reference Standard

AEC-Q101

Continuous Drain Current Id

210mA

Drive Voltage Max Rds On Min Rds On

5V 10V

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2014

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

22pF @ 25V

Rds On Max Id Vgs

5 Ω @ 500mA, 10V

Terminal Sayısı

3

Terminal Pozisyonu

DUAL

Additional Feature

HIGH RELIABILITY

Current Continuous Drain Id25

210mA Ta

Power Dissipation Max

340mW Ta

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Drain Currentmax Abs Id

0.21A

Terminal Kaplaması

Matte Tin (Sn)