DMN65D8LFB-7B

Teknik Özellikler

Current Continuous Drain Id25

260mA Ta

Rise Time

3.15ns

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

25pF @ 25V

Terminal Pozisyonu

BOTTOM

Turn On Delay Time

3.27 ns

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

20V

Montaj Tipi

Surface Mount

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Fall Time Typ

6.29 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation

840mW

Case Connection

DRAIN

Kılıf / Paket

3-UFDFN

Drive Voltage Max Rds On Min Rds On

5V 10V

Continuous Drain Current Id

400mA

Additional Feature

HIGH RELIABILITY

Rds On Max Id Vgs

3 Ω @ 115mA, 10V

Terminal Sayısı

3

Yayın Yılı

2015

Kurşunsuz Kodu

yes

Power Dissipation Max

430mW Ta

Radyasyon Dayanımı

No

Montaj

Surface Mount

Kurşunsuz

Lead Free

Turn Off Delay Time

12.025 ns

Drain Currentmax Abs Id

0.26A

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Number Of Channels

1

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

40

Drain To Source Breakdown Voltage

60V

Fabrika Tedarik Süresi

23 Weeks

Pin Sayısı

3

Vgsth Max Id

2V @ 250μA