Adet bazlı fiyat
- 1+ adet$0.03
- 10+ adet$0.03
- 100+ adet$0.03
- 500+ adet$0.03
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Pin Sayısı
- 3
- Vgsth Max Id
- 2.3V @ 250μA
- Ds Breakdown Voltagemin
- 60V
- JESD-609 Kodu
- e4
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Tepe Reflow Süresi (maks. sn)
- 40
- Power Dissipation
- 470mW
- Number Of Channels
- 1
- Number Of Elements
- 1
- Drain To Source Voltage Vdss
- 60V
- Case Connection
- DRAIN
- Fabrika Tedarik Süresi
- 16 Weeks
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- N-Channel
- Continuous Drain Current Id
- 410mA
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Kılıf / Paket
- 3-UFDFN
- Parça Durumu
- Active
- Vgs Max
- ±20V
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 2.8nC @ 10V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Gate To Source Voltage Vgs
- 20V
- Montaj Tipi
- Surface Mount
- Kurşunsuz Kodu
- yes
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Power Dissipation Max
- 470mW Ta
- Ambalaj
- Tape & Reel (TR)
- Additional Feature
- HIGH RELIABILITY
- Rise Time
- 4.93ns
- Current Continuous Drain Id25
- 410mA Ta
- Input Capacitance Ciss Max Vds
- 80pF @ 40V
- Rds On Max Id Vgs
- 1.4 Ω @ 40mA, 10V
- Terminal Sayısı
- 3
- Terminal Pozisyonu
- BOTTOM
- Reach Svhc
- No SVHC
- Turn On Delay Time
- 3.89 ns
- Transistor Element Material
- SILICON
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