DMN62D0UW-7

Teknik Özellikler

Gate Charge Qg Max Vgs

0.5nC @ 4.5V

Configuration

SINGLE WITH BUILT-IN DIODE

Parça Durumu

Active

Vgs Max

±20V

Drainsource On Resistancemax

2Ohm

Kılıf / Paket

SC-70, SOT-323

Drive Voltage Max Rds On Min Rds On

1.8V 4.5V

Continuous Drain Current Id

340mA

Reference Standard

AEC-Q101

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G3

Fet Type

N-Channel

Drain To Source Voltage Vdss

60V

Number Of Elements

1

Fabrika Tedarik Süresi

14 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

60V

Vgsth Max Id

1V @ 250μA

Montaj

Surface Mount

Terminal Kaplaması

Matte Tin (Sn)

Drain Currentmax Abs Id

0.34A

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2014

Current Continuous Drain Id25

340mA Ta

Additional Feature

HIGH RELIABILITY

Input Capacitance Ciss Max Vds

32pF @ 30V

Rds On Max Id Vgs

2 Ω @ 100mA, 4.5V

Terminal Pozisyonu

DUAL

Terminal Sayısı

3

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

320mW Ta

Kurşunsuz Kodu

yes

Montaj Tipi

Surface Mount