Adet bazlı fiyat
- 1+ adet$0.03
- 10+ adet$0.03
- 100+ adet$0.03
- 500+ adet$0.03
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Montaj
- Surface Mount
- Kurşunsuz
- Lead Free
- Turn Off Delay Time
- 26.4 ns
- Radyasyon Dayanımı
- No
- Yayın Yılı
- 2011
- Additional Feature
- HIGH RELIABILITY
- Rds On Max Id Vgs
- 2 Ω @ 100mA, 4V
- Terminal Sayısı
- 3
- Power Dissipation Max
- 470mW Ta
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 3
- Vgs Max
- ±20V
- Parça Durumu
- Active
- Element Configuration
- Single
- Drainsource On Resistancemax
- 2Ohm
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- N-Channel
- Drain To Source Voltage Vdss
- 60V
- Number Of Channels
- 1
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 16 Weeks
- JESD-609 Kodu
- e4
- Contact Plating
- Gold
- Pin Sayısı
- 3
- Ds Breakdown Voltagemin
- 60V
- Vgsth Max Id
- 1V @ 250μA
- Fall Time Typ
- 16.3 ns
- Turn On Delay Time
- 3.4 ns
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Current Continuous Drain Id25
- 100mA Ta
- Rise Time
- 3.4ns
- Reach Svhc
- No SVHC
- Terminal Pozisyonu
- BOTTOM
- Input Capacitance Ciss Max Vds
- 32pF @ 25V
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tape & Reel (TR)
- Gate To Source Voltage Vgs
- 20V
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