DMN61D8LQ-13

Teknik Özellikler

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G3

Reference Standard

AEC-Q101

Drive Voltage Max Rds On Min Rds On

3V 5V

Continuous Drain Current Id

470mA

Vgs Max

±12V

Parça Durumu

Active

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drainsource On Resistancemax

2.4Ohm

Configuration

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Gate Charge Qg Max Vgs

0.74nC @ 5V

Ds Breakdown Voltagemin

60V

Vgsth Max Id

2V @ 1mA

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

17 Weeks

Drain To Source Voltage Vdss

60V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

1

Drain Currentmax Abs Id

0.47A

Terminal Kaplaması

Matte Tin (Sn)

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Power Dissipation Max

390mW Ta

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

12.9pF @ 12V

Rds On Max Id Vgs

1.8 Ω @ 150mA, 5V

Terminal Sayısı

3

Terminal Pozisyonu

DUAL

Current Continuous Drain Id25

470mA Ta

Additional Feature

HIGH RELIABILITY

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2015