DMN60H080DS-7

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

1.7nC @ 10V

Parça Durumu

Active

Vgs Max

±20V

Drainsource On Resistancemax

290Ohm

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Tepe Reflow Sıcaklığı (°C)

260

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

70mA

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G3

Fabrika Tedarik Süresi

21 Weeks

Number Of Elements

1

Drain To Source Breakdown Voltage

600V

Number Of Channels

1

Power Dissipation

700mW

Tepe Reflow Süresi (maks. sn)

30

Çalışma Sıcaklığı

-55°C~150°C TJ

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Vgsth Max Id

3V @ 250μA

Turn Off Delay Time

21 ns

Terminal Kaplaması

Matte Tin (Sn)

Drain Currentmax Abs Id

0.07A

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2017

Yüzey Montaj

YES

Turn On Delay Time

7 ns

Terminal Pozisyonu

DUAL

Terminal Sayısı

3

Rds On Max Id Vgs

100 Ω @ 60mA, 10V

Input Capacitance Ciss Max Vds

25pF @ 25V

Max Junction Temperature Tj

150°C

Current Continuous Drain Id25

80mA Ta

Yükseklik

1.1mm

Power Dissipation Max

1.1W Ta

Ambalaj

Tape & Reel (TR)