Adet bazlı fiyat
- 1+ adet$1.17
- 10+ adet$1.11
- 100+ adet$1.04
- 500+ adet$0.98
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Yükseklik
- 580μm
- Power Dissipation Max
- 660mW Ta
- Kurşunsuz Kodu
- yes
- Yayın Yılı
- 2012
- Rds On Max Id Vgs
- 38m Ω @ 4.3A, 10V
- Terminal Sayısı
- 3
- Additional Feature
- HIGH RELIABILITY
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Kurşunsuz
- Lead Free
- Montaj
- Surface Mount
- Turn Off Delay Time
- 20.1 ns
- JESD-609 Kodu
- e4
- Terminal Formu
- NO LEAD
- Vgsth Max Id
- 3V @ 250μA
- Pin Sayısı
- 6
- Fabrika Tedarik Süresi
- 17 Weeks
- Number Of Channels
- 1
- Number Of Elements
- 1
- Tepe Reflow Süresi (maks. sn)
- 40
- Drain To Source Breakdown Voltage
- 60V
- Fet Type
- N-Channel
- RoHS Durumu
- ROHS3 Compliant
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Vgs Max
- ±20V
- Parça Durumu
- Active
- Uzunluk
- 2.05mm
- Drainsource On Resistancemax
- 0.038Ohm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Ambalaj
- Tape & Reel (TR)
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Surface Mount
- Gate To Source Voltage Vgs
- 20V
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Turn On Delay Time
- 6.6 ns
- Reach Svhc
- No SVHC
- Terminal Pozisyonu
- DUAL
- Input Capacitance Ciss Max Vds
- 1287pF @ 25V
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