DMN55D0UTQ-7

Teknik Özellikler

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Vgsth Max Id

1V @ 250μA

Ds Breakdown Voltagemin

50V

Fabrika Tedarik Süresi

17 Weeks

Tepe Reflow Süresi (maks. sn)

40

Number Of Elements

1

Drain To Source Voltage Vdss

50V

Çalışma Sıcaklığı

-55°C~150°C TJ

Reference Standard

AEC-Q101

Continuous Drain Current Id

160mA

Drive Voltage Max Rds On Min Rds On

2.5V 4V

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G3

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

4Ohm

Tepe Reflow Sıcaklığı (°C)

260

Kılıf / Paket

SOT-523

Parça Durumu

Active

Vgs Max

±12V

Power Dissipation Max

200mW Ta

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Kurşunsuz Kodu

yes

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2015

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

25pF @ 10V

Rds On Max Id Vgs

4 Ω @ 100mA, 4V

Terminal Sayısı

3

Terminal Pozisyonu

DUAL

Additional Feature

HIGH RELIABILITY

Current Continuous Drain Id25

160mA Ta

Terminal Kaplaması

Matte Tin (Sn)

Drain Currentmax Abs Id

0.16A

Montaj

Surface Mount