DMN31D5UFZ-7B

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

1.2V 4.5V

Continuous Drain Current Id

220mA

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Gate Charge Qg Max Vgs

0.35nC @ 4.5V

Element Configuration

Single

Parça Durumu

Active

Vgs Max

±12V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

3-XFDFN

Terminal Formu

NO LEAD

JESD-609 Kodu

e4

Pin Sayısı

3

Vgsth Max Id

1V @ 250μA

Number Of Elements

1

Drain To Source Breakdown Voltage

30V

Number Of Channels

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fabrika Tedarik Süresi

15 Weeks

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain Currentmax Abs Id

0.22A

Fall Time Typ

6.9 ns

Montaj

Surface Mount

Turn Off Delay Time

20 ns

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

393mW Ta

Gate To Source Voltage Vgs

12V

Montaj Tipi

Surface Mount

Turn On Delay Time

3.1 ns

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2014

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Current Continuous Drain Id25

220mA Ta

Rise Time

2ns

Input Capacitance Ciss Max Vds

22.2pF @ 15V