DMN3070SSN-7

Teknik Özellikler

Uzunluk

3.1mm

Drainsource On Resistancemax

0.04Ohm

Vgs Max

±20V

Parça Durumu

Active

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Number Of Elements

1

Number Of Channels

1

Drain To Source Voltage Vdss

30V

Fabrika Tedarik Süresi

16 Weeks

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Pin Sayısı

59

Vgsth Max Id

2.1V @ 250μA

Ds Breakdown Voltagemin

30V

Turn Off Delay Time

4.4 ns

Montaj

Surface Mount

Radyasyon Dayanımı

No

Terminal Kaplaması

Matte Tin (Sn)

Yayın Yılı

2010

Additional Feature

HIGH RELIABILITY

Rds On Max Id Vgs

40m Ω @ 4.2A, 10V

Terminal Sayısı

3

Power Dissipation Max

780mW Ta

Yükseklik

1.3mm

Gate Charge Qg Max Vgs

13.2nC @ 10V

Genişlik

1.7mm

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current Id

4.2A

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Jesd30 Code

R-PDSO-G3

Weight

7.994566mg

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

4.1 ns

Turn On Delay Time

4.3 ns

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Rise Time

20.1ns