DMN3033LDM-7

Teknik Özellikler

ECCN Kodu

EAR99

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

40

Genişlik

1.6mm

Uzunluk

3mm

Montaj

Surface Mount

Power Dissipation

2W

Yayın Yılı

2009

Vgsth Max Id

2.1V @ 250μA

Turn On Delay Time

11 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Contact Plating

Tin

Number Of Elements

1

Transistor Element Material

SILICON

Fall Time Typ

30 ns

Gate To Source Voltage Vgs

20V

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Radyasyon Dayanımı

No

Additional Feature

HIGH RELIABILITY

Power Dissipation Max

2W Ta

Yükseklik

1.1mm

Vgs Max

±20V

Kılıf / Paket

SOT-23-6

Ambalaj

Tape & Reel (TR)

Reach Svhc

No SVHC

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

30V

Current Continuous Drain Id25

6.9A Ta

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

7ns

Drainsource On Resistancemax

0.033Ohm

Pin Sayısı

6

Input Capacitance Ciss Max Vds

755pF @ 10V

Pulsed Drain Currentmax Idm

20A

Number Of Channels

1

Continuous Drain Current Id

6.9A

Gate Charge Qg Max Vgs

13nC @ 10V