DMN3030LSS-13

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Fall Time Typ

14 ns

Transistor Element Material

SILICON

Weight

850.995985mg

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

40

Terminal Pozisyonu

DUAL

ECCN Kodu

EAR99

Genişlik

3.95mm

Uzunluk

4.95mm

Montaj

Surface Mount

Drain Currentmax Abs Id

9A

Yayın Yılı

2012

Turn On Delay Time

3.2 ns

Vgsth Max Id

2.1V @ 250μA

Additional Feature

HIGH RELIABILITY

Power Dissipation Max

2.5W Ta

Yükseklik

1.5mm

Vgs Max

±25V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Ambalaj

Tape & Reel (TR)

Reach Svhc

No SVHC

Terminal Kaplaması

Matte Tin (Sn)

Gate To Source Voltage Vgs

25V

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Radyasyon Dayanımı

No

Rise Time

4.5ns

Pin Sayısı

8

Input Capacitance Ciss Max Vds

741pF @ 15V

Pulsed Drain Currentmax Idm

40A

Number Of Channels

1

Continuous Drain Current Id

9A

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

30V

Current Continuous Drain Id25

9A Ta

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ