Adet bazlı fiyat
- 1+ adet$0.05
- 10+ adet$0.05
- 100+ adet$0.05
- 500+ adet$0.04
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Fall Time Typ
- 9.6 ns
- Transistor Element Material
- SILICON
- Genişlik
- 675μm
- Transistor Application
- SWITCHING
- Tepe Reflow Süresi (maks. sn)
- 40
- Terminal Pozisyonu
- BOTTOM
- ECCN Kodu
- EAR99
- Uzunluk
- 1.08mm
- Yayın Yılı
- 2015
- Drain Currentmax Abs Id
- 0.75A
- Turn On Delay Time
- 4.11 ns
- Vgsth Max Id
- 900mV @ 250μA
- Montaj
- Surface Mount
- Power Dissipation Max
- 470mW Ta
- Additional Feature
- HIGH RELIABILITY
- Yükseklik
- 480μm
- Kılıf / Paket
- 3-XFDFN
- Vgs Max
- ±12V
- Reach Svhc
- No SVHC
- Ambalaj
- Tape & Reel (TR)
- Gate To Source Voltage Vgs
- 12V
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Fet Type
- N-Channel
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Drainsource On Resistancemax
- 0.55Ohm
- Rise Time
- 3.82ns
- Number Of Channels
- 1
- Input Capacitance Ciss Max Vds
- 36pF @ 16V
- Case Connection
- DRAIN
- Continuous Drain Current Id
- 750mA
- Drain To Source Breakdown Voltage
- 20V
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 750mA Ta
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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